IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V Olympus LH-40B Brand AMP - TE CONNECTIVITY

Brand AMP - TE CONNECTIVITY Part Number 1-1318118-6 Quantity Each Technical Data Sheet EN Drawing EN 3D Product Image EN

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Brand PRO POWER Part Number 15070 Quantity Each Technical Data Sheet EN

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Through Hole product from HARTING with the model number 09662526617Product details

IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V Olympus LH-40B Brand AMP - TE CONNECTIVITYThe IXFN200N10P is a N channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. Fast intrinsic rectifier Rugged polysilicon gate cell structure Encapsulating epoxy meets UL94V 0, flammability classification Rugged polysilicon gate cell structure Easy to mount High power density Space savings Applications