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400 nm to 1700 nm InGaAs PIN Photodiode Photosurface (mm):Φ1 Excellent Channel Isolation
400 nm to 1700 nm InGaAs PIN Photodiode Photosurface (mm):Φ1 Excellent Channel Isolation
400 nm to 1700 nm InGaAs PIN Photodiode Photosurface (mm):Φ1 Excellent Channel Isolation
400 nm to 1700 nm InGaAs PIN Photodiode Photosurface (mm):Φ1 Excellent Channel Isolation

400 nm to 1700 nm InGaAs PIN Photodiode Photosurface (mm):Φ1 Excellent Channel Isolation

SKU 15341753533
4.5
USD80.00 USD111.00

Pay in 4 interest-free payments of $20.00 Learn more

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USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Oct 28 - Nov 2

Description

Excellent Channel Isolation

The frequency of the product is 200 MHz and the RF power is 2

Pebble can be incorporated to a structure such as bridge

It offers very low insertion loss

Superior Low Insertion Loss

400 nm to 1700 nm InGaAs PIN Photodiode Photosurface (mm):Φ1 Excellent Channel IsolationLead Time: 1 Week Datasheet

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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